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Features
* No External Components Except PIN Diode * Supply-voltage Range: 4.5V to 5.5V * High Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong
Signal Adaption (ATC)
* High Immunity Against Disturbances from Daylight and Lamps * Small Size and Innovative Pad Layout * Available for Carrier Frequencies between 33 kHz to 40 kHz; Adjusted
by Zener Diode Fusing
* TTL and CMOS Compatible * Suitable Minimum Burst Length 10 Pulses/Burst
IR Receiver ASSP ATA2525
Applications
* Home Entertainment Applications * Home Appliances * Remote Control Equipment
1. Description
The IC ATA2525 is a complete IR receiver for data communication that was developed and optimized for use in carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity as well as high suppression of noise from daylight and lamps. An innovative and patented pad layout offers unique flexibility for assembly of IR receiver modules. The ATA2525 is available with standard carrier frequencies (33, 36, 37, 38, 40 kHz) and 3 different noise suppression regulation types (standard, lamp, noise) covering requirements of different high-volume remote control solutions (please refer to selection guide available for ATA2525/ATA2526). The ATA2525 operates in a supply voltage range of 4.5V to 5.5V. The function of ATA2525 can be described using the block diagram (see Figure 1-1 on page 2). The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality.
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Figure 1-1.
Block Diagram
VS
IN Input
CGA and filter
OUT Demodulator
Microcontroller
Oscillator Carrier frequency f0
AGC/ATC and digital control
ATA2525
Modulated IR signal min 10 pulses GND
2
ATA2525
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ATA2525
2. Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage Supply current Input voltage Input DC current at VS = 5V Output voltage Output current Operating temperature Storage temperature Power dissipation at Tamb = 25C Symbol VS IS VIN IIN VO IO Tamb Tstg Ptot Value -0.3 to +6 3 -0.3 to VS 0.75 -0.3 to VS 10 -25 to +85 -40 to +125 30 Unit V mA V mA V mA C C mW
3. Thermal Resistance
Parameter Junction ambient TSSOP8 Symbol RthJA Value 110 Unit K/W
4. Electrical Characteristics
Tamb = -25C to +85C, VS = 4.5V to 5.5V unless otherwise specified. No. 1 1.1 1.2 2 2.1 2.2 2.3 2.4 3 3.1 3.2 Parameters Supply Supply-voltage range Supply current Output Internal pull-up resistor Output voltage low Output voltage high Output current clamping Input Input DC current Input DC current; Figure 6-1 on page 5 VIN = 0; see Figure 6-7 on page 8 VIN = 0; Vs = 5V, Tamb = 25C 5 5 IIN_DCMAX IIN_DCMAX -85 -530 -960 A A C B Tamb = 25C; see Figure 6-7 on page 8 IL = 2 mA; see Figure 6-7 on page 8 Tamb = 25C R2 = 0; see Figure 6-7 on page 8 1,3 3,6 3,1 3,6 RPU VOL VOH IOCL VS - 0.25 8 40 250 VS k mV V mA A B A B IIN = 0 1 1 VS IS 4.5 0.8 5 1.1 5.5 1.4 V mA C B Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage
3
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4. Electrical Characteristics (Continued)
Tamb = -25C to +85C, VS = 4.5V to 5.5V unless otherwise specified. No. Parameters Test Conditions Test signal: see Figure 6-6 on page 7 VS = 5V, Tamb = 25C, IIN_DC = 1 A; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 6-6 on page 7; BER = 50(1) Pin Symbol Min. Typ. Max. Unit Type*
3.3
Minimum detection threshold current; Figure 6-2 on page 5
3
IEemin
-600
pA
B
3.4
Test signal: see Figure 6-6 on page 7 VS = 5V, Minimum detection Tamb = 25C, threshold current with I = 1 A, AC current disturbance IN_DC square pp, IIN_AC100 = 3 A at burst N = 16, 100 Hz f = f0; tPER = 10 ms, Figure 6-6 on page 7; BER = 50%(1) Test signal: see Figure 6-6 on page 7 VS = 5V, Tamb = 25C, IIN_DC = 1 A; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 6-6 on page 7; BER = 5%(1)
3
IEemin
-850
pA
C
3.5
Maximum detection threshold current
3
IEemax
-400
A
D
4 4.1 4.2 4.3 4.4 4.5 4.6
Controlled Amplifier and Filter Maximum value of variable gain (CGA) Minimum value of variable gain (CGA) Total internal amplification(2) VS = 5V, Tamb = 25C VS = 5V, Tamb = 25C VS = 5V, Tamb = 25C GVARMAX GVARMIN GMAX f0_FUSE f0 -3 dB; f0 = 38 kHz; see Figure 6-4 on page 6 B -3 -6.7 51 -5 71 f0 f0 3.5 +3 +4.1 dB dB dB % % kHz D D D A C B
Center frequency fusing VS = 5V, Tamb = 25C accuracy of bandpass Overall accuracy center frequency of bandpass BPF bandwidth
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage
4
ATA2525
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ATA2525
5. Reliability
Electrical qualification (1000h at 150C) in molded SO8 plastic package
6. Typical Electrical Curves at Tamb = 25C
Figure 6-1. VIN versus IIN_DC, VS = 5V
3 2.94 2.79 2.44 2
VIN (V)
1
1.14
0 0.0
0.1
1.0
10.0
100.0
1000.0
IIN_DC (A)
Figure 6-2.
IEemin versus IIN_DC, VS = 5V
100
IEemin (nA)
10 3.6 1 1.2 0.49 0 0.1 1.0 10.0 100.0 1000.0
IIN_DC (A)
5
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Figure 6-3.
Data Transmission Rate, VS = 5V
1750 1418 1500 1250 1119 Lamp type 735 750 500 250 0 28 32 36 40 44 Noise type 931 693 980 730 Standard type 1493
Bits/s
1000
547
f0 (kHz)
Figure 6-4.
Typical Bandpass Curve
1.1 1.0
Relative Amplitude
0.9 0.8 -3 dB 0.7 0.6 0.5 f 0.4 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 -3 dB
f/f0
Q = f0/f; f = -3 dB values. Example: Q = 1/(1.047 - 0.954) = 11
6
ATA2525
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ATA2525
Figure 6-5. Illustration of Used Terms
1066 s 533 s Burst (N = 16 pulses) Period (P = 16)
IN
1 7 16 7 7
33 s
OUT
t DON
t DOFF Envelope 1
533 s Envelope 16 17056 s/data word
OUT
Telegram pause Data word 17 ms TREP = 62 ms Data word
t
Example: f = 30 kHz, burst with 16 pulses, 16 periods Figure 6-6. Test Circuit
IEe = U1/400 k U1 1 nF 400 k V DD = 5V IIN_DC R1 = 220
VS IEe VPULSE IIN 20 k 1 nF U2 IN ATA2525 GND OUT
IPIN_AC100
20 k f0 16
I IN_DC = U2/40 k C1 = 4.7 F
+
DC
+
tPER = 10 ms
7
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Figure 6-7.
Application Circuit
VDD = 5V
(1)
optional
R1 = 220 IS VS IOCL IIN IN ATA2525 OUT IL RPU = 40 k
R2(1) > 2.4 k
IN
Microcontroller
GND
+
IIN_DC IEe C1 = 4.7 F
VIN
VO C2(1) 470 pF
8
ATA2525
4854E-AUTO-10/06
ATA2525
7. Chip Dimensions
Figure 7-1. Chip Size in m
990,960 GND 393,839 IN 603,828
scribe
length
OUT 224,495
ATA2525
47,72 VS Zapping
0,0
Versioning
width
Note: Pad coordinates are for lower left corner of the pad in m from the origin 0,0
Dimensions
Length inclusive scribe Width inclusive scribe Thickness Pads Fusing pads
1.04 mm 1.11 mm 290 5% 80 x 80 60 x 60 AlCu/AlSiTi(1) 0.8 m Si3N4/SiO2(1) 0.7/0.3 m
Pad metallurgy
Material Thickness
Finish
Material Thickness
Note:
1. Value depends on manufacture location.
9
4854E-AUTO-10/06
8. Ordering Information
Delivery: unsawn wafers (DDW) in box Extended Type Number ATA2525R1xx(1)-DDW ATA2525R3xx -DDW ATA2525R5xx -DDW Notes:
(1) (1)
D(2) 1493 980 730
Type Standard type: high data rate Lamp type: enhanced suppression of disturbances, secure data transmission Noise type: best suppression of disturbances, low data rate
1. xx means the used carrier frequency value (33, 36, 37, 38 or 40 kHz) 2. Maximum data transmission rate up to bits/s with f0 = 40 kHz, VS = 5V (see Figure 6-2 on page 5)
9. Pad Layout
Figure 9-1. Pad Layout
GND
IN
OUT
ATA2525
VS
Zapping
Versioning
Table 9-1.
Pin Description
Symbol OUT VS GND IN Zapping Versioning Function Data output Supply voltage GND Input pin diode f0 adjust type adjust
10
ATA2525
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ATA2525
10. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History * * * * * * * * Features on page 1 changed Applications on page 1 changed Section 1 "Description" on page 1 changed Section 2 "Pin Configuration" on page 2 deleted Section 4 "Electrical Characteristics" number 3.3 on page 4 changed Section 4 "Electrical Characteristics" number 3.4 on page 4 changed Section 6 "ESD" on page 5 deleted Section 10 "Ordering Information" on page 10 changed
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4854D-AUTO-04/06
* Put datasheet in a new template * Section 10 "Ordering Information" on page 10 changed
11
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4854E-AUTO-10/06

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